2N7002E,215
Manufacturer:
Nxp Semiconductors
Mfr.Part #:
2N7002E,215
Datasheet:
Description:
MOSFETs SOT-23 SMD/SMT N-Channel number of channels:1 830 mW 60 V Continuous Drain Current (ID):385 mA 0.69 nC
| Parameter | Value |
|---|---|
| Length | 3 mm |
| Width | 1.4 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 3 Ω |
| Height | 1 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Non-Compliant |
| REACH SVHC | No SVHC |
| Weight | 4.535924 g |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Max Power Dissipation | 830 mW |
| Power Dissipation | 830 mW |
| Threshold Voltage | 2 V |
| Number of Channels | 1 |
| Input capacitance | 50 pF |
| Continuous Drain Current (ID) | 385 mA |
| Rds On Max | 3 Ω |
| Drain to Source Voltage (Vdss) | 60 V |
| Element Configuration | Single |
| Gate Charge | 0.69 nC |
| Drain to Source Resistance | 780 mΩ |
| Nominal Vgs | 2 V |
| Max Dual Supply Voltage | 60 V |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Gate to Source Threshold Voltage | 2.5 V |
| Drain to Source Breakdown Voltage | 60 V |
| FET Type(Transistor Polarity) | N-Channel |
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